Effective Electron Mass in Low-Dimensional Semiconductors by Sitangshu Bhattacharya

By Sitangshu Bhattacharya

This booklet bargains with the powerful Electron Mass (EEM) in low dimensional semiconductors. The fabrics thought of are quantum constrained non-linear optical, III-V, II-VI, hole, Ge, PtSb2, zero-gap, under pressure, Bismuth, carbon nanotubes, GaSb, IV-VI, Te, II-V, Bi2Te3, Sb, III-V, II-VI, IV-VI semiconductors and quantized III-V, II-VI, IV-VI and HgTe/CdTe superlattices with graded interfaces and potent mass superlattices. The presence of excessive electrical box and the sunshine waves switch the band constitution of optoelectronic semiconductors in primary methods, that have additionally been included within the research of the EEM in quantized constructions of optoelectronic compounds that keep watch over the experiences of the quantum impact units lower than powerful fields. the significance of dimension of band hole in optoelectronic fabrics lower than powerful electrical box and exterior photograph excitation has additionally been mentioned during this context. The impression of crossed electrical and quantizing magnetic fields at the EEM and the EEM in seriously doped semiconductors and their nanostructures is mentioned. This publication comprises 2 hundred open learn difficulties which shape the vital a part of the textual content and are necessary for either Ph. D aspirants and researchers within the fields of solid-state sciences, fabrics technology, nanoscience and know-how and allied fields as well as the graduate classes in sleek semiconductor nanostructures.
The ebook is written for publish graduate scholars, researchers and engineers, execs within the fields of stable kingdom sciences, fabrics technology, nanoscience and know-how, nanostructured fabrics and condensed topic physics.

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Extra resources for Effective Electron Mass in Low-Dimensional Semiconductors

Example text

16) is the well-known two-band model of Kane and is used in the literature to study the physical properties of those III-V and optoelectronic materials whose energy band structures obey the aforementioned inequalities. 18) Thus, we observe that the EEM in the present case is a function of Fermi energy only due to the presence of band nonparabolicity. 23) where η is the dimensionless x independent variable. 27) n z =1 nz π 2 dz 2 2m c It may be noted that the results of this section are already well known in the literature [220].

E g0 + )(2 + 3E g0 )}−1 and m 0 is the free electron mass. 29) 2 t¯ 11 4m c t¯12 and a12 ≡ 4t¯12 . 31) It appears that the EEM in this case is a function of Fermi energy alone and is independent of size quantum number. 34) n z =1 where T55 (E Fs , n z ) ≡ I12 (E Fs ) − nz π dz 2 2m c 2 and s T56 (E Fs , n z ) ≡ L(r )T55 (E Fs , n z ) r =1 (c) Model of Palik et al. The energy spectrum of the conduction electrons in III-V semiconductors up to the fourth order in effective mass theory, taking into account the interactions of heavy hole, light hole and the split-off holes can be expressed in accordance with the model of Palik et al.

6) where, gv is the valley degeneracy, A(E, n z ) is the area of the constant energy 2D wave vector space for UFs, H (E − E n z )is the Heaviside step function and (E n z ) is the corresponding subband energy. 9) 10 1 The EEM in Ultrathin Films (UFs) of Nonparabolic Semiconductors where, ψ1 (E Fs ) − ψ3 (E Fs )(n z π/dz )2 , ψ2 (E Fs ) T51 (E Fs , n z ) ≡ s T52 (E Fs , n z ) ≡ L(r )[T51 (E Fs , n z )], r =1 L(r ) = 2(k B T )2r (1 − 21−2r )ξ(2r ) ∂∂E 2r , k B is the Boltzmann constant, T is the 2r f temperature, r is the set of real positive integers whose upper limit is s, ξ(2r ) is the Zeta function of order 2r [217].

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