High-Speed Photodiodes in Standard CMOS Technology by Sasa Radovanovic, Anne-Johan Annema, Bram Nauta

By Sasa Radovanovic, Anne-Johan Annema, Bram Nauta

High-speed Photodiodes in ordinary CMOS Technology describes high-speed photodiodes in ordinary CMOS know-how which permit monolithic integration of optical receivers for short-haul conversation. for brief haul conversation the price point is critical , and accordingly it really is fascinating that the optical receiver might be built-in within the similar CMOS know-how because the remainder of the approach. If this is often attainable then finally a singe-chip method together with optical inputs turns into possible, doing away with EMC and crosstalk difficulties, whereas info price may be tremendous high.

The challenge of photodiodes in regular CMOS know-how it that they have got very constrained bandwidth, permitting info premiums as much as purely 50Mbit consistent with moment. High-speed Photodiodes in general CMOS Technology first analyzes the photodiode behaviour and compares latest recommendations to reinforce the rate. After this, the publication introduces a brand new and strong digital equalizer procedure that makes info premiums of 3Gb/s attainable, with out altering the producing know-how. the appliance of this system are available in brief haul fibre verbal exchange, optical revealed circuit forums, but in addition photodiodes for laser disks.

Show description

Read or Download High-Speed Photodiodes in Standard CMOS Technology PDF

Best microwaves books

Lumped Element Quadrature Hybrids

Quadrature hybrids are passive circuit components which are utilized in a variety of RF and microwave purposes, and this state of the art e-book is the 1st source to supply engineers with a superb knowing in their features and layout. The e-book is helping pros use lumped aspect quadrature hybrids to accomplish super large bandwidth operation.

Industrial Color Physics

This particular booklet begins with a quick historic evaluate of the advance of the theories of colour imaginative and prescient and functions of commercial colour physics. the 3 dominant components generating colour - gentle resource, colour pattern, and observer - are defined intimately. The standardized colour areas are proven and comparable colour values are utilized to attribute colour features of absorption in addition to of impact colorants.

Semiconductor Optics

This up-to-date and enlarged re-creation of Semiconductor Optics presents an advent to and an outline of semiconductor optics from the IR during the noticeable to the UV, together with linear and nonlinear optical homes, dynamics, magneto and electrooptics, high-excitation results and laser procedures, a few functions, experimental strategies and staff concept.

Design of Microwave Active Devices

This booklet offers tools for the layout of the most microwave lively units. the 1st bankruptcy specializes in amplifiers operating within the linear mode. The authors current the issues surrounding narrowband and wideband impedance matching, balance, polarization and the noise issue, in addition to particular topologies reminiscent of the dispensed amplifier and the differential amplifier.

Extra resources for High-Speed Photodiodes in Standard CMOS Technology

Example text

These carriers are moving inside the photodiode either by drift (inside depletion regions) or by diffusion (outside depletion regions). 1) For better understanding of the total diode response, the frequency response of every current component will be separately presented. The excess carrier profiles and the currents of the different photodiode regions are calculated by taking the Laplace transform of the diffusion equations in the time domain, [2]. These analyses are used to estimate the frequency domain behavior of CMOS photodiodes.

Taking into account the depth of wells and the penetration depth of light in silicon, it follows that typically the contributions of generated charge below wells is dominant. This simplification yields much simpler derivations at the cost of only a small error. Generated carriers in the substrate diffuse either towards upper allocated junctions (nwell or n+) or deeper into the substrate where they are recombined. The substrate current component consists of the non-recombined carriers, diffusion upwards.

The bandwidth in this case is f3dBnwell = 450 MHz. Thus, the larger the nwell width Ly , in comparison with its depth Lx (Ly > 2Lx ), the lower the influence of the nwell-width on its bandwidth. The overall maximal intrinsic bandwidth is 5 MHz. This bandwidth is almost independent of the nwell geometry due to the dominant and size-independent substrate current contribution: the fast diffusion response in the nwells and the fast drift response are overshadowed by the large substrate current. 15 shows the physical effects that take place inside a nwell/p-substrate photodiode, after illumination using a Dirac-pulse at t = 0 with λ = 850 nm.

Download PDF sample

Rated 4.56 of 5 – based on 18 votes

Related posts