By Paulo Augusto Dal Fabbro
The RF energy amplifier is a key part in a instant transceiver and is taken into account by means of many because the layout bottleneck within the transmitting chain. Linear CMOS RF strength Amplifiers for instant purposes addresses basic points in RF energy amplifier layout for integration in CMOS applied sciences at 2.4, 3.7 and 5.2 GHz: potency enhancement and frequency agility. the well known linearity–efficiency trade-off is circumvented via using an efficiency-enhancement procedure known as the dynamic offer RF strength amplifier. The layout of the program is defined with nice element and in comparison with different potency enhancement strategies. The frequency agility is completed with a unique impedance matching community in response to coupled inductors. The layout of a dual-band RF energy amplifier is proven, with a cautious research of the tunable matching community and its interplay with the remainder of the circuit. The issues and conclusions drawn all through this booklet are according to simulation in addition to size effects from the built-in circuit prototypes rigorously outfitted and respecting most sensible practices in RF layout.
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Additional resources for Linear CMOS RF Power Amplifiers for Wireless Applications: Efficiency Enhancement and Frequency-Tunable Capability (Analog Circuits and Signal Processing)
Bühler H (1997) Réglage de systèmes d’électronique de puissance. PPUR, Lausanne 10. Büler H (1986) Réglage par mode de glissement. PPUR, Lausanne 11. Coilcraft (2005) Power chip inductors—1812PS series. Data Sheet, URL http://www. pdf 12. Cripps SC (2006) RF Power Amplifiers for Wireless Communications, 2nd edn. Artech House, Norwood 13. 11a WLAN applications. IEEE Microw Wirel Compon Lett 14(11):504–506 14. Fager C, Pedro JC, de Carvalho NB, Zirath H, Fortes F, Rosário MJ (2004) A comprehensive analysis of IMD behavior in RF CMOS power amplifiers.
30 3 Design of the Dynamic Supply CMOS RF Power Amplifier Fig. 14 Rollett stability factor simulation the signal reflected in port 1 is higher than the incident signal, which, by its turn, means that the real part of the impedance at port 1 is negative. The same is valid for port 2. However, the Rollett criteria are valid only under a proviso stated by Rollett in , but often overlooked: . . , open or short circuits, as appropriate) lie in the left half-plane. This is known as the Rollett’s proviso and, although it does not represent a problem for single active device circuits, it is important for circuits with multiple active devices .
6 dB. Although this gain is low, low power gains are relatively common in single-stage CMOS PA designs . 4 GHz. 4 GHz. According to the procedure described in Chap. 4 GHz and the resulting S parameters are shown in Figs. 12. 4 dB. 3. 46 4 Measurement Results for the Dynamic Supply CMOS RF Power Amplifier Fig. 7 Unmatched power amplifier SOLT measurement (S11 and S22 ) Fig. 4 RF Power Amplifier Characterization Fig. 2 GHz (S11 and S22 ) Fig. 2 GHz (S21 and S12 ) 47 48 4 Measurement Results for the Dynamic Supply CMOS RF Power Amplifier Fig.