Thin Film Ferroelectric Materials and Devices by Scott R. Summerfelt (auth.), R. Ramesh (eds.)

By Scott R. Summerfelt (auth.), R. Ramesh (eds.)

The earlier 5 years have witnessed a few dramatic advancements within the normal zone of ferroelectric skinny motion pictures fabrics and units. Ferroelectrics are usually not new fabrics by way of any stretch ofimagination. certainly, they've been identified because the early partofthis century and renowned ferroelectric fabrics comparable to Barium Titanate were in use because the moment international warfare. within the overdue sixties and seventies, a substantial amountofresearch and improvement attempt used to be made to create a high-quality country nonvolatile reminiscence utilizing ferroelectrics in a fluctuate uncomplicated matrix-addressed scheme. those makes an attempt failed essentially because of difficulties linked to both the fabrics ordue to gadget architectures. The early eighties observed the appearance of latest fabrics processing methods, corresponding to sol-gel processing, that enabled researchers to manufacture sub-micron skinny movies of ferroelectric fabrics on a silicon substrate. those pioneering advancements signaled the onsetofa revival within the areaofferroelectric skinny motion pictures, specifically ferroelectric nonvolatile thoughts. learn and improvement attempt in ferroelectric fabrics and units has now hit a feverish pitch, Many college laboratories, nationwide laboratories and complex R&D laboratories oflarge IC brands are deeply excited about the pursuit of ferroelectric machine applied sciences. Many businesses all over the world are making an investment huge manpower and assets into ferroelectric applied sciences. a few have already introduced items starting from embedded thoughts in micro­ controllers, low density stand-alone stories, microwave circuit parts, andrf identity tags. there's now massive optimism that ferroelectric units andproducts will occupy an important market-share within the new millennium.

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Extra info for Thin Film Ferroelectric Materials and Devices

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Dielectric constant dependence on deposition temperature was examined. Fig. S shows deposition temperature dependence of the dielectric constants of BST films with BalSr ratios of 7S12S SO/SO and 30nO. Although the thicknesses of these BST films are fixed at SO nm, their dielectric constants increase as deposition temperature is raised. ~-~-~g-~-g-,--' :::r::-:· 400 ···················r····················l······· 300 ···················r·········· .. ;................... ,................... S Deposition temperature dependence of dielectric constant.

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