Thin Film Shape Memory Alloys: Fundamentals and Device by Shuichi Miyazaki, Yong Qing Fu, Wei Min Huang

By Shuichi Miyazaki, Yong Qing Fu, Wei Min Huang

This booklet, the 1st devoted to this intriguing and swiftly growing to be box, permits readers to appreciate and get ready fine quality, high-performance TiNi form reminiscence alloys (SMAs). It covers the houses, training and characterization of TiNi SMAs, with specific concentrate on the most recent applied sciences and purposes in MEMS and organic units. uncomplicated ideas and idea are lined to introduce new-comers to the topic, when a number of sub-topics, equivalent to movie deposition, characterization, submit therapy, and employing skinny movies to useful events, entice extra proficient readers. every one bankruptcy is written by means of professional authors, delivering an summary of every subject and summarizing all of the most recent advancements, making this a fantastic reference for practitioners and researchers alike.

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Additional resources for Thin Film Shape Memory Alloys: Fundamentals and Device Applications

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5 lm to several lm, while the grain size of solution-treated bulk TiNi alloys is up to several tens of lm. This fine internal structure in the thin films also suppresses the martensitic transformation more effectively than the R-phase transformation. 16 shows the shape memory behavior in the thin films corresponding to the samples used in Fig. 15. Again no aging effect is observed in the shape memory behavior. The transformation temperatures and transformation strains do not change with aging time.

Therefore, both Ti-rich and Ni-rich TiNi thin films may reveal nonequilibrium phases during a crystallization process. It has actually been found that Ti-rich TiNi thin films show a non-equilibrium phase, which has never been observed in bulk TiNi alloys, when they are heat-treated at temperatures a little above the crystallization temperature [18]. 6 ks. The electron diffraction pattern taken from this area is shown in Fig. 18(b). The electron micrograph in Fig. 18(a) was taken with all the diffraction spots in Fig.

Q. 6 ks. 6 ks The film was sputtered on the substrate at 623 K. 6 ks. The film was sputtered on the substrate at 623 K. 6 ks after being sputtered on the substrate at 623 K [Miyazaki & Ishida, 1999 [6], with permission from Elsevier]. Overview of sputter-deposited TiNi based thin films 17 The transformation strain increases with increasing stress. However, it is almost constant for each stress irrespective of direction. The calculated results were obtained by assuming that only the most favorable martensite variant grows in each entire grain, so that the calculated result gives the maximum recoverable strain, which is always larger than the experimental result.

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